? 2005 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 600 v v ge(th) i c = 500 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 100 a v ge = 0 v t j = 125c 2 ma i ges v ce = 0 v, v ge = 20 v 200 na v ce(sat) i c = i t , v ge = 15 v t j = 25c 2.1 2.5 v note 1 t j = 125c 2.0 v hiperfast tm igbt lightspeed 2 tm series symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c (die limit) 120 a i cm t c = 25c, 1 ms 500 a ssoa v ge = 15 v, t vj = 125c, r g = 4.7 i cm = 200 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol < 1 ma t = 20 seconds 3000 v~ f c clamping force 20..120/4.5..25 n/ib t l maximum lead temperature for soldering (note 3) 300 c t sold plastic body for 10 seconds 260 c weight to-264 10 g plus247 5 g ds99515 (12/05) v ces = 600 v i c110 = 120 a v ce(sat) = 2.5 v t fi(typ) =45ns ixgk 120n60c2 ixgx 120n60c2 advance technical information plus247(ixgx) e g c (tab) to-264(ixgk) features z very high frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications z high power surface mountable packages (tab) c e g
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 120n60c2 ixgx 120nc60c2 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60 a; v ce = 10 v, note 1 50 50 75 s c ies 11 nf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 680 pf c res 190 pf q g 350 nc q ge i c = i t , v ge = 15 v, v ce = 0.5 v ces 72 nc q gc 131 nc t d(on) 18 ns t ri 25 ns t d(off) 95 150 ns t fi 45 ns e off 0.9 1.6 mj t d(on) 18 ns t ri 25 ns e on 1.6 mj t d(off) 130 ns t fi 85 ns e off 1.5 mj r thjc 0.15 k/w r thjc 0.15 k/w inductive load, t j = 25c i c = 80 a, v ge = 15 v v ce = 400 v, r g = r off = 1.0 inductive load, t j = 125c i c = 80 a, v ge = 15 v v ce = 400 v, r g = r off = 1.0 note: 1. pulse test, t 300 s, duty cycle 2 %; 2. test current i t = 100 a; 3. temperature measured at 1.6 mm (0.062 in.) from case for 10 seconds ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. pins:1-gate 2- drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixgx) outline
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